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Nichicon Corporation (ニチコン株式会社, Nichikon Kabushiki-gaisha) is a manufacturer of capacitors of various types, and is one of the largest manufacturers of capacitors in the world, [citation needed] headquartered in Karasuma Oike, Nakagyō-ku, Kyoto, Japan. In 1950, it separated from the Nii Works Co., established itself as Kansai ...
Front page of a floppy disk controller data sheet (1979) A datasheet, data sheet, or spec sheet is a document that summarizes the performance and other characteristics of a product, machine, component (e.g., an electronic component), material, subsystem (e.g., a power supply), or software in sufficient detail that allows a buyer to understand what the product is and a design engineer to ...
The Nikon FG is an interchangeable lens, 35 mm film, single-lens reflex (SLR) camera. It was manufactured by Nippon Kogaku K. K. (Nikon Corporation since 1988) in Japan from 1982 [3] to 1986. The FG was the successor to the Nikon EM camera of 1979 and the predecessor of the Nikon FG-20 of 1984. These three cameras composed Nikon's first family ...
Aluminium electrolytic capacitor, 1000 μF, 450V. Nippon Chemi-Con Corporation (日本ケミコン株式会社, Nippon Kemikon Kabushiki-gaisha) is a Japanese corporation that produces capacitors and other discrete electronic components.
A number of secondary gates or inputs are then deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG, since the FG is completely surrounded by highly resistive material. So, in terms of its DC operating point, the FG is a floating node.
The FG is interposed between the CG and the MOSFET channel. Because the FG is electrically isolated by its insulating layer, electrons placed on it are trapped. When the FG is charged with electrons, this charge screens the electric field from the CG, thus, increasing the threshold voltage (V T ) of the cell.
Later, Kahng went on to invent the floating-gate MOSFET with Simon Min Sze at Bell Labs, and they proposed its use as a floating-gate (FG) memory cell, in 1967. [4] This was the first form of non-volatile memory based on the injection and storage of charges in a floating-gate MOSFET, [ 5 ] which later became the basis for EPROM (erasable PROM ...
type certificate data sheet TCF Terrain clearance floor TCH threshold crossing height TCI thrust computer indicator TCN TACAN: TCU Telecommunication control unit: Or: terminal control unit, or line control unit, used in Air traffic control: TDOP Time dilution of precision TDR Transponder (In some cases) TDZ touchdown zone TERPS