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Smart cut process. Smart cut is a technological process that enables the transfer of very fine layers of crystalline silicon material onto a mechanical support. It was invented by Michel Bruel of CEA-Leti, and was protected by US patent 5374564. [1]
Surface activated bonding (SAB) is a non-high-temperature wafer bonding technology with atomically clean and activated surfaces. Surface activation prior to bonding by using fast atom bombardment is typically employed to clean the surfaces. High-strength bonding of semiconductors, metals, and dielectrics can be obtained even at room temperature ...
Adhesive bonding with organic materials such as BCB or SU-8 has simple process properties and the ability to form high-aspect ratio micro structures. The bonding procedure is based on polymerization reaction of organic molecules to form long polymer chains during annealing. This cross-link reaction forms BCB and SU-8 to a solid polymer layer. [3]
Wafer bonding is a packaging technology on wafer-level for the fabrication of microelectromechanical systems (MEMS), nanoelectromechanical systems (NEMS), microelectronics and optoelectronics, ensuring a mechanically stable and hermetically sealed encapsulation. The wafers' diameter range from 100 mm to 200 mm (4 inch to 8 inch) for MEMS/NEMS ...
Tape-automated bonding (TAB) is a process that places bare semiconductor chips (dies) like integrated circuits onto a flexible circuit board (FPC) by attaching them to fine conductors in a polyamide or polyimide (like trade names Kapton or UPILEX) film carrier. This FPC with the die(s) (TAB inner lead bonding, ILB) can be mounted on the system ...
DISCO Corporation (株式会社ディスコ, Kabushiki-gaisha Disuko) is a Japanese precision tools maker, especially for the semiconductor production industry.. The company makes dicing saws and laser saws to cut semiconductor silicon wafers and other materials; grinders to process silicon and compound semiconductor wafers to ultra-thin levels; polishing machines to remove the grinding damage ...
Direct bonding, or fusion bonding, is a wafer bonding process without any additional intermediate layers. It is based on chemical bonds between two surfaces of any material possible meeting numerous requirements. [1] These requirements are specified for the wafer surface as sufficiently clean, flat and smooth.
There are several methods for 3D IC design, including recrystallization and wafer bonding methods. There are two major types of wafer bonding, Cu-Cu connections (copper-to-copper connections between stacked ICs, used in TSVs) [18] [19] and through-silicon via (TSV). 3D ICs with TSVs may use solder microbumps, small solder balls as an interface between two individual dies in a 3D IC. [20]