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When more accuracy is desired in modelling the diode's turn-on characteristic, the model can be enhanced by doubling-up the standard PWL-model. This model uses two piecewise-linear diodes in parallel, as a way to model a single diode more accurately. PWL Diode model with 2 branches. The top branch has a lower forward-voltage and a higher ...
Often, an equivalent circuit is sought that simplifies calculation, and more broadly, that is a simplest form of a more complex circuit in order to aid analysis. [1] In its most common form, an equivalent circuit is made up of linear, passive elements. However, more complex equivalent circuits are used that approximate the nonlinear behavior of ...
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
Semiconductor device modeling creates models for the behavior of the electrical devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to capture the electrical behavior of such devices but do not generally ...
A small signal model consists of a small signal (having zero average value, for example a sinusoid, but any AC signal could be used) superimposed on a bias signal (or superimposed on a DC constant signal) such that the sum of the small signal plus the bias signal gives the total signal which is exactly equal to the original (large) signal to be ...
The equivalent resistance R th is the resistance that the circuit between terminals A and B would have if all ideal voltage sources in the circuit were replaced by a short circuit and all ideal current sources were replaced by an open circuit (i.e., the sources are set to provide zero voltages and currents).
The reverse bias rating of the N-drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a reverse voltage to the IGBT, an additional series diode must be used. The minority carriers injected into the N-drift region take time to enter and exit or recombine at turn-on and turn-off.
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
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