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Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The Shockley–Queisser limit, zoomed in near the region of peak efficiency. In a traditional solid-state semiconductor such as silicon, a solar cell is made from two doped crystals, one an n-type semiconductor, which has extra free electrons, and the other a p-type semiconductor, which is lacking free electrons, referred to as "holes." When ...
The electron–hole pair is the fundamental unit of generation and recombination in inorganic semiconductors, corresponding to an electron transitioning between the valence band and the conduction band where generation of an electron is a transition from the valence band to the conduction band and recombination leads to a reverse transition.
J 0, reverse saturation current density (ampere/cm 2) r S, specific series resistance (Ω·cm 2) r SH, specific shunt resistance (Ω·cm 2). This formulation has several advantages. One is that since cell characteristics are referenced to a common cross-sectional area they may be compared for cells of different physical dimensions.
William Bradford Shockley Jr. (February 13, 1910 – August 12, 1989) was an American inventor, physicist, and eugenicist.He was the manager of a research group at Bell Labs that included John Bardeen and Walter Brattain.
Under reverse bias, there is a small leakage current as some thermally excited electrons in the metal have enough energy to surmount the barrier. To first approximation this current should be constant (as in the Shockley diode equation ); however, current rises gradually with reverse bias due to a weak barrier lowering (similar to the vacuum ...
Figure 1. Top: NPN base width for low collector–base reverse bias; Bottom: narrower NPN base width for large collector–base reverse bias. Hashed areas are depleted regions. 2. The Early voltage (V A) as seen in the output-characteristic plot of a BJT. The Early effect, named after its discoverer James M.