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  2. List of MOSFET applications - Wikipedia

    en.wikipedia.org/wiki/List_of_MOSFET_applications

    The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [235] The IGBT is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation.

  3. MOS-controlled thyristor - Wikipedia

    en.wikipedia.org/wiki/MOS-controlled_thyristor

    An MOS-controlled thyristor (MCT) is a voltage-controlled fully controllable thyristor, controlled by MOSFETs (metal–oxide–semiconductor field-effect transistors). It was invented by V.A.K. Temple in 1984, and was principally similar to the earlier insulated-gate bipolar transistor (IGBT). [ 1 ]

  4. IXYS Integrates Thyristor and IGBT in the SMPD Module ... - AOL

    www.aol.com/news/2013-02-26-ixys-integrates...

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  5. MOS composite static induction thyristor - Wikipedia

    en.wikipedia.org/wiki/MOS_composite_static...

    MOS composite static induction thyristor (CSMT or MCS) is a combination of a MOS transistor connected in cascode relation to the SI-thyristor. [ 1 ] The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element.

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  7. IXYS Introduces an Anode Gated Thyristor Technology Platform

    www.aol.com/news/2013-06-11-ixys-introduces-an...

    IXYS Introduces an Anode Gated Thyristor Technology Platform Enabling Simplified Gate Drive for AC Power Control and Half Bridge Configuration BIEL, Switzerland--(BUSINESS WIRE)-- IXYS Corporation ...

  8. IXYS Introduces the ComPack Thyristor Module Platform - AOL

    www.aol.com/news/2013-02-21-ixys-introduces-the...

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  9. Integrated gate-commutated thyristor - Wikipedia

    en.wikipedia.org/wiki/Integrated_gate-commutated...

    An IGCT is a special type of thyristor. It is made of the integration of the gate unit with the Gate Commutated Thyristor (GCT) wafer device. The close integration of the gate unit with the wafer device ensures fast commutation of the conduction current from the cathode to the gate. The wafer device is similar to a gate turn-off thyristor (GTO).