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Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory . [ 2 ]
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States.It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families. [2]
Spin-transfer torque can be used to flip the active elements in magnetic random-access memory. Spin-transfer torque magnetic random-access memory (STT-RAM or STT-MRAM) is a non-volatile memory with near-zero leakage power consumption which is a major advantage over charge-based memories such as SRAM and DRAM.
The much larger sales of flash memory compared to the alternative NVRAMs support a much larger research and development effort. Flash memory is produced using semiconductor linewidths of 30 nm at Samsung (2007) while FeRAMs are produced in linewidths of 350 nm at Fujitsu and 130 nm at Texas Instruments (2007).
Recovered-memory therapy (RMT) is a catch-all term for a controversial and scientifically discredited form of psychotherapy that critics say utilizes one or more unproven therapeutic techniques (such as some forms of psychoanalysis, hypnosis, journaling, past life regression, guided imagery, and the use of sodium amytal interviews) to purportedly help patients recall previously forgotten memories.
Memory distrust syndrome is a condition first described by Gísli Guðjónsson and James MacKeith in 1982, in which an individual doubts the accuracy of their memory concerning the content and context of events of which they have experienced. Since the individual does not trust their own memory, they will commonly depend on outside sources of ...
TMR, or more specifically the magnetic tunnel junction, is also the basis of MRAM, a new type of non-volatile memory. The 1st generation technologies relied on creating cross-point magnetic fields on each bit to write the data on it, although this approach has a scaling limit at around 90–130 nm. [10]