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The eSATA connector is a more robust SATA connector, intended for connection to external hard drives and SSDs. eSATA's transfer rate (up to 6 Gbit/s) is similar to that of USB 3.0 (up to 5 Gbit/s) and USB 3.1 (up to 10 Gbit/s). A device connected by eSATA appears as an ordinary SATA device, giving both full performance and full compatibility ...
To allow for voltage drops, the voltage at the host port, hub port, and device are specified to be at least 4.75 V, 4.4 V, and 4.35 V respectively by USB 2.0 for low-power devices, [a] but must be at least 4.75 V at all locations for high-power [b] devices (however, high-power devices are required to operate as a low-powered device so that they ...
Starting with the 80-conductor cable defined for use in ATAPI5/UDMA4, the master Device 0 device goes at the far-from-the-host end of the 18-inch (460 mm) cable on the black connector, the slave Device 1 goes on the grey middle connector, and the blue connector goes to the host (e.g. motherboard IDE connector, or IDE card).
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.
For example, a 25 nm gate length would be typical for the 22 nm node. On September 22, 2009, during the Intel Developer Forum Fall 2009, Intel showed a 22 nm wafer and announced that chips with 22 nm technology would be available in the second half of 2011. [9] SRAM cell size is said to be 0.092 μm 2, smallest reported to date.
coaxial cable connects machines together, each machine using a T-connector to connect to its NIC. Requires terminators at each end. Classic fibre Ethernet - (Data rate: 10 Mbit/s - Line code: PE - Line rate: 20 MBd - Full-Duplex / Half-Duplex) FOIRL: 802.3d-1987 (CL9.9) superseded Fibre 850 nm: ST: MAU: OF: 1k: 2 1 1 original standard for ...
The "32 nm" node is the step following the "45 nm" process in CMOS semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level.
In computing and computer science, a processor or processing unit is an electrical component (digital circuit) that performs operations on an external data source, usually memory or some other data stream. [1]