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The Fredkin gate (also CSWAP or CS gate), named after Edward Fredkin, is a 3-bit gate that performs a controlled swap. It is universal for classical computation. It has the useful property that the numbers of 0s and 1s are conserved throughout, which in the billiard ball model means the same number of balls are output as input.
The GATE is used as a requirement for financial assistance (e.g. scholarships) for a number of programs, though criteria differ by admitting institution. [2] In December 2015, the University Grants Commission and MHRD announced that the scholarship for GATE-qualified master's degree students is increased by 56% from ₹ 8,000 (US$94) per month to ₹ 12,400 (US$150) per month.
The gate can now be applied to any two-qubit state, entangled or otherwise. The gate K {\displaystyle K} will leave the second qubit untouched and apply the Hadamard transform to the first qubit. If applied to the Bell state in our example, we may write that as:
A NOT gate, for example, can be constructed from a Toffoli gate by setting the three input bits to {a, 1, 1}, making the third output bit (1 XOR (a AND 1)) = NOT a; (a AND b) is the third output bit from {a, b, 0}. Essentially, this means that one can use Toffoli gates to build systems that will perform any desired Boolean function computation ...
The SET has, like the FET, three electrodes: source, drain, and a gate. The main technological difference between the transistor types is in the channel concept. While the channel changes from insulated to conductive with applied gate voltage in the FET, the SET is always insulated.
CNTFETs conduct electrons when a positive bias is applied to the gate and holes when a negative bias is applied, and drain current increases with increasing a magnitude of an applied gate voltage. [28] Around V g = V ds /2, the current gets the minimum due to the same amount of the electron and hole contributions to the current.
The Cirac–Zoller controlled-NOT gate is an implementation of the controlled-NOT (CNOT) quantum logic gate using cold trapped ions that was proposed by Ignacio Cirac and Peter Zoller in 1995 and represents the central ingredient of the Cirac–Zoller proposal for a trapped-ion quantum computer. [1]
It is induced by the oxide electric field from the applied gate voltage V G. This is known as the inversion channel. It is the conduction channel that allows the electrons to flow from the source to the drain. [2] Overstressing the gate oxide layer, a common failure mode of MOS devices, may lead to gate rupture or to stress induced leakage current.