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  2. Chemical vapor deposition - Wikipedia

    en.wikipedia.org/wiki/Chemical_vapor_deposition

    Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films .

  3. Dieter Gruen - Wikipedia

    en.wikipedia.org/wiki/Dieter_Gruen

    Gruen invented a radically new method for making diamond films by chemical vapor deposition (CVD). He researched and patented this process for deposition from a plasma cloud of very smooth, very thin (mono-atomic layers) aligned carbon atoms in a diamond molecular structure. This is known as an Ultrananocrystalline diamond (UNCD) film.

  4. Metalorganic vapour-phase epitaxy - Wikipedia

    en.wikipedia.org/wiki/Metalorganic_vapour-phase...

    Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), [1] is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer ...

  5. Synthetic diamond - Wikipedia

    en.wikipedia.org/wiki/Synthetic_diamond

    This low-pressure process is known as chemical vapor deposition (CVD). William G. Eversole reportedly achieved vapor deposition of diamond over diamond substrate in 1953, but it was not reported until 1962. [41] [42] Diamond film deposition was independently reproduced by Angus and coworkers in 1968 [43] and by Deryagin and Fedoseev in 1970.

  6. Vapor–liquid–solid method - Wikipedia

    en.wikipedia.org/wiki/Vapor–liquid–solid_method

    Au-Si droplets on the surface of the substrate act to lower the activation energy of normal vapor-solid growth. For example, Si can be deposited by means of a SiCl 4:H 2 gaseous mixture reaction (chemical vapor deposition), only at temperatures above 800 °C, in normal vapor-solid growth. Moreover, below this temperature almost no Si is ...

  7. Chemical vapor infiltration - Wikipedia

    en.wikipedia.org/wiki/Chemical_vapor_infiltration

    A typical demonstration of the process is shown in Figure 1. Here, the gases and matrix material enter the reactor from the feed system at the bottom of the reactor. The fibrous preform undergoes a chemical reaction at high temperature with the matrix material and thus the latter infiltrates in the fiber or preform crevices.

  8. Epitaxy - Wikipedia

    en.wikipedia.org/wiki/Epitaxy

    [14] [15] Chemical beam epitaxy, on the other hand, is an ultra-high vacuum process that uses gas phase precursors to generate the molecular beam. [ 16 ] Another widely used technique in microelectronics and nanotechnology is atomic layer epitaxy , in which precursor gases are alternatively pulsed into a chamber, leading to atomic monolayer ...

  9. Vacuum deposition - Wikipedia

    en.wikipedia.org/wiki/Vacuum_deposition

    When the vapor source is a liquid or solid, the process is called physical vapor deposition (PVD), [3] which is used in semiconductor devices, thin-film solar panels, and glass coatings. [4] When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD).