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The growth rate can vary from 4 to 7 Å/cycle depending on the deposition temperature (177 to 325 °C) and Si 2 H 6 reactant exposure (~10 4 to 10 6 L), factors that may influence Si 2 H 6 insertion into Si–H bonds [35] [36] and result in a silicon CVD contribution to the tungsten ALD growth.
This is a better-controlled process than reactive ion etching, though the issue with commercial use of it has been throughput; sophisticated gas handling is required, and removal rates of one atomic layer per second are around the state of the art. [1] The equivalent process for depositing material is atomic layer deposition (ALD).
Atomic layer epitaxy (ALE), [1] more generally known as atomic layer deposition (ALD), [2] is a specialized form of thin film growth that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate.
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Capacitive plasmas are usually very lightly ionized, resulting in limited dissociation of precursors and low deposition rates. Much denser plasmas can be created using inductive discharges, in which an inductive coil excited with a high-frequency signal induces an electric field within the discharge, accelerating electrons in the plasma itself ...
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Molecular layer deposition (MLD) is a vapour phase thin film deposition technique based on self-limiting surface reactions carried out in a sequential manner. [1] Essentially, MLD resembles the well established technique of atomic layer deposition (ALD) but, whereas ALD is limited to exclusively inorganic coatings, the precursor chemistry in ...