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Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
The ideality factor (also called the emissivity factor) is a fitting parameter that describes how closely the diode's behavior matches that predicted by theory, which assumes the p–n junction of the diode is an infinite plane and no recombination occurs within the space-charge region. A perfect match to theory is indicated when n = 1.
It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic. [1] It was largely superseded by the diac.
The voltage versus current characteristics of an LED is similar to any diode. Current is approximately an exponential function of voltage according to the Shockley diode equation, and a small voltage change may result in a large change in current. If the voltage is below or equal to the threshold no current flows and the result is an unlit LED.
Equation (1) is valid for the practically relevant situation, where the neutral base region of a pn-junction makes up most of the volume of the diode. Typically, the thickness of a crystalline Si solar cell is ~ 200 μm while the thickness of the emitter and space charge region is only on the order of hundreds of nanometers, i.e. three orders ...
The Shockley–Ramo theorem is a method for calculating the electric current induced by a charge moving in the vicinity of an electrode.Previously named simply the "Ramo Theorem", the modified name was introduced by D.S. McGregor et al. in 1998 [1] to recognize the contributions of both Shockley and Ramo to understanding the influence of mobile charges in a radiation detector.