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A variety of silicon diodes of different current ratings. At left is a bridge rectifier. On the 3 center diodes, a painted band identifies the cathode terminal. Silicon diodes are the most widely used rectifiers for lower voltages and powers, and have largely replaced other rectifiers. Due to their substantially lower forward voltage (0.3V ...
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
Whereas normal semiconductor diodes have a roughly fixed voltage drop of around 0.5 to 1 volts, active rectifiers behave as resistances, and can have arbitrarily low voltage drop. Historically, vibrator -driven switches or motor-driven commutators have also been used for mechanical rectifiers and synchronous rectification.
In power supply design, a bridge circuit or bridge rectifier is an arrangement of diodes or similar devices used to rectify an electric current, i.e. to convert it from an unknown or alternating polarity to a direct current of known polarity. In some motor controllers, an H-bridge is used to control the direction the motor turns.
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.
A hand-made diode bridge. The silver band on the diodes indicates the cathode side of the diode.. A diode bridge is a bridge rectifier circuit of four diodes that is used in the process of converting alternating current (AC) from the input terminals to direct current (DC, i.e. fixed polarity) on the output terminals.
Band diagram for n-type semiconductor Schottky barrier at zero bias (equilibrium) with graphical definition of the Schottky barrier height, Φ B, as the difference between the interfacial conduction band edge E C and Fermi level E F. [For a p-type Schottky barrier, Φ B is the difference between E F and the valence band edge E V.]
A simple precision rectifier circuit. The basic circuit implementing such a feature is shown on the right, where can be any load. When the input voltage is negative, the opamp puts its most negative voltage on the diode's anode, so the diode is reverse biased and works like an open circuit.
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