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  2. Education and training of electrical and electronics engineers

    en.wikipedia.org/wiki/Education_and_training_of...

    Device technology: integrated circuits fabrication process, oxidation, diffusion, ion implantation, photolithography, n-tub, p-tub and twin-tub CMOS process. Analog Circuits: Equivalent circuits (large and small-signal) of diodes, BJTs, JFETs, and MOSFETs, Simple diode circuits, clipping, clamping, rectifier. Biasing and bias stability of ...

  3. Electronic engineering - Wikipedia

    en.wikipedia.org/wiki/Electronic_engineering

    Device technology: integrated circuit fabrication process, oxidation, diffusion, ion implantation, photolithography, n-tub, p-tub and twin-tub CMOS process. [12] [13] Analog circuits: Equivalent circuits (large and small-signal) of diodes, BJT, JFETs, and MOSFETs. Simple diode circuits, clipping, clamping, rectifier.

  4. CMOS - Wikipedia

    en.wikipedia.org/wiki/CMOS

    CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]

  5. Front end of line - Wikipedia

    en.wikipedia.org/wiki/Front_end_of_line

    Illustration of FEOL (device generation in the silicon, bottom) and BEOL (depositing metalization layers, middle part) to connect the devices. CMOS fabrication process. The front end of line (FEOL) is the first portion of IC fabrication where the individual components (transistors, capacitors, resistors, etc.) are patterned in a semiconductor substrate. [1]

  6. List of semiconductor scale examples - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    NEC and Toshiba used this process for their 4 Mb DRAM memory chips in 1986. [47] Hitachi, IBM, Matsushita and Mitsubishi Electric used this process for their 4 Mb DRAM memory chips in 1987. [37] Toshiba's 4 Mb EPROM memory chip in 1987. [47] Hitachi, Mitsubishi and Toshiba used this process for their 1 Mb SRAM memory chips in 1987. [47]

  7. Shallow trench isolation - Wikipedia

    en.wikipedia.org/wiki/Shallow_trench_isolation

    The shallow trench isolation fabrication process of modern integrated circuits in cross-sections. Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components.

  8. Process design kit - Wikipedia

    en.wikipedia.org/wiki/Process_Design_Kit

    A process design kit (PDK) is a set of files used within the semiconductor industry to model a fabrication process for the design tools used to design an integrated circuit. The PDK is created by the foundry defining a certain technology variation for their processes. It is then passed to their customers to use in the design process.

  9. Integrated circuit layout - Wikipedia

    en.wikipedia.org/wiki/Integrated_circuit_layout

    Layout view of a simple CMOS operational amplifier. In integrated circuit design, integrated circuit (IC) layout, also known IC mask layout or mask design, is the representation of an integrated circuit in terms of planar geometric shapes which correspond to the patterns of metal, oxide, or semiconductor layers that make up the components of the integrated circuit.