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Schematic illustration of one reaction cycle of the ALD process, using the trimethylaluminium (TMA) -water process to make thin aluminium oxide films as (simplified) example. There, the starting surface contains hydroxyls (OH groups) as reactive sites; Step 1 is the reaction of TMA; Step 2 is a purge or evacuation step, Step 3 is the reaction ...
Also known as hafnium dioxide or hafnia, this colourless solid is one of the most common and stable compounds of hafnium. It is an electrical insulator with a band gap of 5.3~5.7 eV. [2] Hafnium dioxide is an intermediate in some processes that give hafnium metal. Hafnium(IV) oxide is quite inert.
Atomic layer deposition (ALD) depends on very small amounts of water vapor for High-K film formation. The technique requires the proper molecule be available and not replaced by competitive species that will disrupt the lattice structure. Temperature control of both the gas and water, as well as level control, affect delivery rate.
The white hafnium(IV) oxide (HfO 2), also known as hafnium dioxide or hafnia, with a melting point of 2,812 °C and a boiling point of roughly 5,100 °C, is very similar to zirconia, but slightly more basic. [13] It is an electrical insulator with a band gap of 5.3~5.7 eV. [15] Hafnium(IV) oxide typically adopts the same structure as zirconia ...
Sequential infiltration synthesis (SIS) is a technique derived from atomic layer deposition (ALD) in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors, enabling precise manipulation over the composition, structure, and properties. The technique has applications in fields such as ...
Hafnium-based compounds are employed in gates of transistors as insulators in the 45 nm (and below) generation of integrated circuits from Intel, IBM and others. [69] [70] Hafnium oxide-based compounds are practical high-k dielectrics, allowing reduction of the gate leakage current which improves performance at such scales. [71] [72] [73]
[7] [8] At the same time, IBM announced plans to transition to high-κ materials, also hafnium-based, for some products in 2008. While not identified, the most likely dielectric used in such applications are some form of nitrided hafnium silicates (HfSiON). HfO 2 and HfSiO are susceptible to crystallization during dopant activation annealing.
The Hall–Héroult process is the major industrial process for smelting aluminium. It involves dissolving aluminium oxide (alumina) (obtained most often from bauxite , aluminium 's chief ore, through the Bayer process ) in molten cryolite and electrolyzing the molten salt bath, typically in a purpose-built cell.