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  2. File:Ebers-Moll model schematic (PNP).svg - Wikipedia

    en.wikipedia.org/wiki/File:Ebers-Moll_model...

    Description: A schematic diagram of the Ebers-Moll models of a PNP BJT. The base, collector and emitter currents are I B, I C and I E, the common-base forward and reverse current gains are α F and α R, and the collector and emitter diode currents are I CD and I ED.

  3. Perspective-n-Point - Wikipedia

    en.wikipedia.org/wiki/Perspective-n-Point

    For each solution to PnP, the chosen point correspondences cannot be colinear. In addition, PnP can have multiple solutions, and choosing a particular solution would require post-processing of the solution set. RANSAC is also commonly used with a PnP method to make the solution robust to outliers in the set of point correspondences. P3P methods ...

  4. Common collector - Wikipedia

    en.wikipedia.org/wiki/Common_collector

    The circuit can be explained by viewing the transistor as being under the control of negative feedback. From this viewpoint, a common-collector stage (Fig. 1) is an amplifier with full series negative feedback. In this configuration (Fig. 2 with β = 1), the entire output voltage V out is placed contrary and in series with the input voltage V in.

  5. Open collector - Wikipedia

    en.wikipedia.org/wiki/Open_collector

    The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.

  6. File:PNP emitter follower.svg - Wikipedia

    en.wikipedia.org/wiki/File:PNP_emitter_follower.svg

    Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts.

  7. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...

  8. Output signal switching device - Wikipedia

    en.wikipedia.org/wiki/Output_Signal_Switching_Device

    The device usually acts as the interface of a sensor (such as a light curtain), designed to signal a safety-related event, typically when the light curtain beam's being "broken". OSSD signals are the outputs from the protective device (light curtain or scanner) to a safety relay .

  9. Electronic symbol - Wikipedia

    en.wikipedia.org/wiki/Electronic_symbol

    Wire crossover symbols for circuit diagrams. The CAD symbol for insulated crossing wires is the same as the older, non-CAD symbol for non-insulated crossing wires. To avoid confusion, the wire "jump" (semi-circle) symbol for insulated wires in non-CAD schematics is recommended (as opposed to using the CAD-style symbol for no connection), so as to avoid confusion with the original, older style ...