Search results
Results from the WOW.Com Content Network
The dimeric silicon dioxide, (SiO 2) 2 has been obtained by reacting O 2 with matrix isolated dimeric silicon monoxide, (Si 2 O 2). In dimeric silicon dioxide there are two oxygen atoms bridging between the silicon atoms with an Si–O–Si angle of 94° and bond length of 164.6 pm and the terminal Si–O bond length is 150.2 pm.
A silicon–oxygen bond (Si−O bond) is a chemical bond between silicon and oxygen atoms that can be found in many inorganic and organic compounds. [1] In a silicon–oxygen bond, electrons are shared unequally between the two atoms , with oxygen taking the larger share due to its greater electronegativity .
Silicon compounds are compounds containing the element silicon (Si). As a carbon group element, silicon often forms compounds in the +4 oxidation state, though many unusual compounds have been discovered that differ from expectations based on its valence electrons, including the silicides and some silanes.
It is also used in semiconductor electronics. It is manufactured from silicon dioxide and carbon in an Acheson furnace between 1600 and 2500 °C. There are 250 known crystalline forms with alpha silicon carbide the most common. Silicon itself is an important semiconductor material used in microchips.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
The number of possible isomers increases rapidly with the number of silicon atoms. The members of the series (in terms of number of silicon atoms) follow: silane, SiH 4, 1 silicon atom and 4 hydrogen atoms, analogous to methane; disilane, Si 2 H 6 or H 3 Si−SiH 3, 2 silicon atoms and 6 hydrogen atoms, analogous to ethane
Oxidation of organosilicon compounds, including siloxanes, gives silicon dioxide. This conversion is illustrated by the combustion of hexamethylcyclotrisiloxane: ((CH 3) 2 SiO) 3 + 12 O 2 → 3 SiO 2 + 6 CO 2 + 9 H 2 O. Strong base degrades siloxane group, often affording siloxide salts: ((CH 3) 3 Si) 2 O + 2 NaOH → 2 (CH 3) 3 SiONa + H 2 O
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.