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Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The induction heating coil is visible, and the end of the crystal is just emerging from the melt. The technician is measuring the temperature with an optical pyrometer. The crystals produced by this early apparatus, used in an early Si plant, were only one inch in diameter.
The Bridgman method is a popular way of producing certain semiconductor crystals such as gallium arsenide, for which the Czochralski method is more difficult. The process can reliably produce single-crystal ingots, but does not necessarily result in uniform properties through the crystal. [1]
To achieve a moderate number of medium-sized crystals, a container which has a few scratches works best. Likewise, adding small previously made crystals, or seed crystals, to a crystal growing project will provide nucleating sites to the solution. The addition of only one seed crystal should result in a larger single crystal.
The Kyropoulos method, also known as the KY method or Kyropoulos technique, is a method of bulk crystal growth used to obtain single crystals.. The largest application of the Kyropoulos method is to grow large boules of single crystal sapphire used to produce substrates for the manufacture gallium nitride-based LEDs, and as a durable optical material.
In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and slowly extracted. The molten silicon grows on the seed crystal in a crystalline fashion. As the seed is extracted the silicon solidifies and eventually a large, cylindrical boule is produced. [3]
Shaping processes in crystal growth are a collection of techniques for growing bulk crystals of a defined shape from a melt, usually by constraining the shape of the liquid meniscus by means of a mechanical shaper. Crystals are commonly grown as fibers, solid cylinders, hollow cylinders (or tubes), and sheets (or plates).
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