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NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
It obeys Ohm's law; the current is proportional to the applied voltage over a wide range. Its resistance, equal to the reciprocal of the slope of the line, is constant. A curved I–V line represents a nonlinear resistance, such as a diode. In this type the resistance varies with the applied voltage or current.
The voltage rating of the transistor is a function of the doping and thickness of the N-epitaxial layer (see cross section), while the current rating is a function of the channel width (the wider the channel, the higher the current). In a planar structure, the current and breakdown voltage ratings are both a function of the channel dimensions ...
The penalty isn't overly severe because at higher voltages, where IGBT usage dominates, discrete diodes have a significantly higher performance than the body diode of a MOSFET. The reverse bias rating of the N-drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a reverse voltage to the IGBT ...
In fact, there is a current even for gate biases below the threshold (subthreshold leakage) current, although it is small and varies exponentially with gate bias. Therefore, datasheets will specify threshold voltage according to a specified measurable amount of current (commonly 250 μA or 1 mA).
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
Variants with higher voltage ratings (e.g. 2N3055HV, with a 100 V ceo rating), different case material or type (e.g. steel, aluminium, or plastic with metal tab), and other variations exist, in addition to the minor variations in ratings (such as a power dissipation of 115 or 117 Watts) between 2N3055-marked devices from various manufacturers ...
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