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Avalanche breakdown (or the avalanche effect) is a phenomenon that can occur in both insulating and semiconducting materials. It is a form of electric current multiplication that can allow very large currents within materials which are otherwise good insulators. It is a type of electron avalanche.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
For a device that makes use of the secondary breakdown effect see Avalanche transistor. Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction.
The device operates by shunting excess current when the induced voltage exceeds the avalanche breakdown potential. It is a clamping device, suppressing all overvoltages above its breakdown voltage. It automatically resets when the overvoltage goes away, but absorbs much more of the transient energy internally than a similarly rated crowbar device.
When the reverse-bias breakdown voltage is exceeded, a conventional diode will conduct a high current due to avalanche breakdown. Unless this current is limited by external circuits, the diode may be permanently damaged due to overheating at the small (localized) areas of the semiconductor junction where avalanche breakdown conduction is occurring.
In an avalanche photodiode the original charge carrier is created by the absorption of a photon. The impact ionization process is used in modern cosmic dust detectors like the Galileo Dust Detector [ 2 ] and dust analyzers Cassini CDA , [ 3 ] Stardust CIDA and the Surface Dust Analyser [ 4 ] for the identification of dust impacts and the ...
Charge injection, where hot carriers generated by avalanche breakdown are injected into the oxide layer. Catastrophic ESD failure modes include: Junction burnout, where a conductive path forms through the junction and shorts it; Metallisation burnout, where melting or vaporizing of a part of the metal interconnect interrupts it
The fraction of time that a power plant is available to produce power. avalanche diode A diode intended for regular operation in the reverse, avalanche breakdown, mode. Used as a voltage reference, noise source, and in certain classes of microwave oscillator device. average rectified value