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The historically-significant 2N3055 was designed by Herb Meisel's engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. [10] The 2N3054 and 2N3055 were derived from the 2N1486 and 2N1490 after package redesigns by Milt Grimes.
SOT: Small-outline transistor (also SOT-23, SOT-223, SOT-323). TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads; TO-18: Metal can package with radial leads; TO-39; TO-46; TO-66: Similar shape to the TO-3 but smaller
For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix, such as "A", is sometimes used to indicate a newer variant, but rarely gain groupings.
The 2N2222 is considered a very common transistor, [1] [2] [3] and is used as an exemplar of an NPN transistor. It is frequently used as a small-signal transistor, [4] [5] and it remains a small general purpose transistor [6] of enduring popularity. [7] [8] [9] The 2N2222 was part of a family of devices described by Motorola at a 1962 IRE ...
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3 3D model of TO-3 package. In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits.
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
The popular 2N3055 power transistor in a TO-3 case has an internal thermal resistance from junction to case of 1.52 °C/W. [4] The contact between the device case and heat sink may have a thermal resistance between 0.5 and 1.7 °C/W, depending on the case size and use of grease or insulating mica washer. [3]
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It was developed to combine high efficiency with fast switching.
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