Ad
related to: different methods for transistor biasing
Search results
Results from the WOW.Com Content Network
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
A graphical representation of the current and voltage properties of a transistor; the bias is selected so that the operating point permits maximum signal amplitude without distortion. In electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an electronic component that processes time-varying ...
A bipolar transistor allows a small current injected at one of its terminals to control a much larger current between the remaining two terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
The input signal is applied across the ground and the base circuit of the transistor. The output signal appears across ground and the collector of the transistor. Since the emitter is connected to the ground, it is common to signals, input and output. The common-emitter circuit is the most widely used of junction transistor amplifiers.
Besides the difference due to the Early effect, the transistor β-values will differ because the β 0-values depend on current, and the two transistors now carry different currents (see Gummel–Poon model). Further, Q 2 may get substantially hotter than Q 1 due to the associated higher power dissipation. To maintain matching, the temperature ...
[1] [3] Faithful amplification can only occur on transistors with a forward biased emitter-base junction, a reverse biased collector-base junction, and proper zero signal collector current. Without the correct bias, the transistor will not operate efficiently and cause its output to distort .
Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.
One method of creating devices with multiple threshold voltages is to apply different bias voltages (Vb) to the base or bulk terminal of the transistors. Other methods involve adjusting the gate oxide thickness, gate oxide dielectric constant (material type), or dopant concentration in the channel region beneath the gate oxide.
Ad
related to: different methods for transistor biasing