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  2. Erdkunde - Wikipedia

    en.wikipedia.org/wiki/Erdkunde

    However, since preparations for the new journal were already well advanced in Bonn, the plan was pursued and the first issue of the journal "Erdkunde Archiv für Wissenschaftliche Geographie" was published in 1947. [3] The title of the journal emerged from the original plan to continue the "Zeitschrift der Gesellschaft für Erdkunde zu Berlin".

  3. UBV photometric system - Wikipedia

    en.wikipedia.org/wiki/UBV_photometric_system

    The filters are selected so that the mean wavelengths of response functions (at which magnitudes are measured to mean precision) are 364 nm for U, 442 nm for B, 540 nm for V. Zero-points were calibrated in the B−V (B minus V) and U−B (U minus B) color indices selecting such A0 main sequence stars which are not affected by interstellar ...

  4. Physik Journal - Wikipedia

    en.wikipedia.org/wiki/Physik_Journal

    The Physikalische Blätter was founded in 1943 by Ernst Brüche, who was also the editor from 1944 to 1972. At the start, it was issued by the Informationsstelle Deutscher Physiker. Starting in 1946, it became an official publication of the Deutsche Physikalische Gesellschaft (DPG) and was then published under the name Neue Physikalische Blätter.

  5. 3 nm process - Wikipedia

    en.wikipedia.org/wiki/3_nm_process

    In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.

  6. 2 nm process - Wikipedia

    en.wikipedia.org/wiki/2_nm_process

    In semiconductor manufacturing, the 2 nm process is the next MOSFET (metal–oxide–semiconductor field-effect transistor) die shrink after the 3 nm process node.. The term "2 nanometer", or alternatively "20 angstrom" (a term used by Intel), has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors.

  7. Orders of magnitude (length) - Wikipedia

    en.wikipedia.org/wiki/Orders_of_magnitude_(length)

    2.3 nm – smallest gate oxide thickness in microprocessors; 3 nm – width of a DNA helix; 3 nm – flying height of the head of a hard disk; 3 nm – the average half-pitch of a memory cell manufactured circa 2022; 3.4 nm – length of a DNA turn (10 bp) 3.8 nm – size of an albumin molecule; 5 nm – size of the gate length of a 16 nm processor

  8. Choi's theorem on completely positive maps - Wikipedia

    en.wikipedia.org/wiki/Choi's_theorem_on...

    The vector space C nm can be viewed as the direct sum = compatibly with the above identification and the standard basis of C n. If P k ∈ C m × nm is projection onto the k -th copy of C m , then P k * ∈ C nm × m is the inclusion of C m as the k -th summand of the direct sum and

  9. Prouhet–Thue–Morse constant - Wikipedia

    en.wikipedia.org/wiki/Prouhet–Thue–Morse...

    The continued fraction expansion of the constant is [0; 2, 2, 2, 1, 4, 3, 5, 2, 1, 4, 2, 1, 5, 44, 1, 4, 1, 2, 4, 1, …] (sequence A014572 in the OEIS) Yann Bugeaud and Martine Queffélec showed that infinitely many partial quotients of this continued fraction are 4 or 5, and infinitely many partial quotients are greater than or equal to 50. [2]