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Graphene exhibits a pronounced response to perpendicular external electric fields, potentially forming field-effect transistors (FET), but the absence of a band gap fundamentally limits its on-off conductance ratio to less than ~30 at room temperature. [36] A 2006 paper proposed an all-graphene planar FET with side gates. [37]
In addition to experimental investigation of graphene and graphene-based devices, numerical modeling and simulation of graphene has also been an important research topic. The Kubo formula provides an analytic expression for the graphene's conductivity and shows that it is a function of several physical parameters including wavelength ...
The effect was reported by Geim's group and by Kim and Zhang, whose papers [13] [15] appeared in Nature in 2005. Before these experiments other researchers had looked for the quantum Hall effect [27] and Dirac fermions [28] in bulk graphite. Geim and Novoselov received awards for their pioneering research on graphene, notably the 2010 Nobel ...
The electronic properties of graphene are significantly influenced by the supporting substrate. [59] [60] The Si(100)/H surface does not perturb graphene's electronic properties, whereas the interaction between it and the clean Si(100) surface changes its electronic states significantly. This effect results from the covalent bonding between C ...
So far, the graphene plasmonic effects have been demonstrated for different applications ranging from light modulation [15] [16] to biological/chemical sensing. [17] [18] [19] High-speed photodetection at 10 Gbit/s based on graphene and 20-fold improvement on the detection efficiency through graphene/gold nanostructure were also reported. [20]
Bilayer graphene displays the anomalous quantum Hall effect, a tunable band gap [3] and potential for excitonic condensation. [4] Bilayer graphene typically can be found either in twisted configurations where the two layers are rotated relative to each other or graphitic Bernal stacked configurations where half the atoms in one layer lie atop half the atoms in the other. [5]
The fundamental advantage of an integrated graphene-CNT structure is the high surface area three-dimensional framework of the CNTs coupled with the high edge density of graphene. Graphene edges provide significantly higher charge density and reactivity than the basal plane, but they are difficult to arrange in a three-dimensional, high volume ...
Kim's group authored an influential paper in 2007 describing a transport gap introduced by lithographic patterning of graphene to form nanoribbons. This was an important proof of principle in the development of graphene electronics as it allowed on-off switching of the graphene devices by a factor of 1000 at low temperature. [7]