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When more accuracy is desired in modelling the diode's turn-on characteristic, the model can be enhanced by doubling-up the standard PWL-model. This model uses two piecewise-linear diodes in parallel, as a way to model a single diode more accurately. PWL Diode model with 2 branches. The top branch has a lower forward-voltage and a higher ...
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
Semiconductor device modeling creates models for the behavior of semiconductor devices based on fundamental physics, such as the doping profiles of the devices. It may also include the creation of compact models (such as the well known SPICE transistor models), which try to capture the electrical behavior of such devices but do not generally ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
Zener diodes have a low breakdown voltage. A standard value for breakdown voltage is for instance 5.6 V. This means that the voltage at the cathode cannot be more than about 5.6 V higher than the voltage at the anode (though there is a slight rise with current), because the diode breaks down, and therefore conducts, if the voltage gets any higher.
Active full-wave rectification with two MOSFETs and a center tap transformer. Replacing a diode with an actively controlled switching element such as a MOSFET is the heart of active rectification. MOSFETs have a constant very low resistance when conducting, known as on-resistance (R DS(on)). They can be made with an on-resistance as low as 10 ...
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In the measurement process the steady-state diode reverse polarization voltage is disturbed by a voltage pulse. This voltage pulse reduces the electric field in the space charge region and allows free carriers from the semiconductor bulk to penetrate this region and recharge the defects causing their non-equilibrium charge state. After the ...