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Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide. Silicon dioxide could be grown on a silicon semiconductor surface. [46] Silicon oxide layers could protect silicon surfaces during diffusion processes, and could be used for diffusion masking ...
The semiconductor used for carrier generation has usually a band-gap smaller than the photon energy, and the most common choice is pure germanium. [ 25 ] [ 26 ] Most detectors use a p–n junction for carrier extraction, however, detectors based on metal–semiconductor junctions (with germanium as the semiconductor) have been integrated into ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
In 1955, Carl Frosch and Lincoln Derick at Bell Labs accidentally discovered that silicon dioxide (SiO 2) could be grown on silicon. [40] [41] By 1957 Frosch and Derick published their work on the first manufactured SiO 2 semiconductor oxide transistor: the first planar transistors, in which drain and source were adjacent at the same surface. [42]
Silicon tetrachloride is manufactured on a huge scale as a precursor to the production of pure silicon, silicon dioxide, and some silicon esters. [11] The silicon tetrahalides hydrolyse readily in water, unlike the carbon tetrahalides, again because of the larger size of the silicon atom rendering it more open to nucleophilic attack and the ...
Silicon dioxide or quartz, SiO 2, very well characterized; Silicon monoxide, SiO, not very well characterized This page was last edited on 28 August 2018 ...
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.
The process involves the basic procedures of silicon dioxide (SiO 2) oxidation, SiO 2 etching and heat diffusion. The final steps involves oxidizing the entire wafer with an SiO 2 layer, etching contact vias to the transistors, and depositing a covering metal layer over the oxide , thus connecting the transistors without manually wiring them ...