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As the diagram on the right shows, the gallium (Ga+) primary ion beam hits the sample surface and sputters a small amount of material, which leaves the surface as either secondary ions (i+ or i−) or neutral atoms (n 0). The primary beam also produces secondary electrons (e −). As the primary beam rasters on the sample surface, the signal ...
Wire crossover symbols for circuit diagrams. The CAD symbol for insulated crossing wires is the same as the older, non-CAD symbol for non-insulated crossing wires. To avoid confusion, the wire "jump" (semi-circle) symbol for insulated wires in non-CAD schematics is recommended (as opposed to using the CAD-style symbol for no connection), so as to avoid confusion with the original, older style ...
Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. [1] Ion beam deposition setup with mass separator. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. [2]
An electrostatic lens is a device that assists in the transport of charged particles. [1] [2] [3] For instance, it can guide electrons emitted from a sample to an electron analyzer, analogous to the way an optical lens assists in the transport of light in an optical instrument.
A principal focus or focal point is a special focus: For a lens , or a spherical or parabolic mirror , it is a point onto which collimated light parallel to the axis is focused. Since light can pass through a lens in either direction, a lens has two focal points – one on each side.
The einzel lens principle in a simplified form was also used as a focusing mechanism in display and television cathode ray tubes, [3] [4] and has the advantage of providing a good sharply focused spot throughout the useful life of the tube's electron gun, with minimal or no readjustment needed (many monochrome TVs did not have or need focus controls), although in high-resolution monochrome ...
Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time.
Ion-beam lithography, or ion-projection lithography, is similar to Electron beam lithography, but uses much heavier charged particles, ions. In addition to diffraction being negligible, ions move in straighter paths than electrons do both through vacuum and through matter, so there seems be a potential for very high resolution.