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Macroscopic material failure is defined in terms of load carrying capacity or energy storage capacity, equivalently. Li [2] presents a classification of macroscopic failure criteria in four categories: Stress or strain failure; Energy type failure (S-criterion, T-criterion) Damage failure; Empirical failure
Time-dependent gate oxide breakdown (or time-dependent dielectric breakdown, TDDB) is a kind of transistor aging, a failure mechanism in MOSFETs, when the gate oxide breaks down as a result of long-time application of relatively low electric field (as opposed to immediate breakdown, which is caused by strong electric field).
In chemical engineering, transport phenomena are studied in reactor design, analysis of molecular or diffusive transport mechanisms, and metallurgy. The transport of mass, energy, and momentum can be affected by the presence of external sources: An odor dissipates more slowly (and may intensify) when the source of the odor remains present.
Metallurgical failure analysis is the process to determine the mechanism that has caused a metal component to fail. It can identify the cause of failure, providing insight into the root cause and potential solutions to prevent similar failures in the future, as well as culpability, which is important in legal cases. [ 1 ]
An approach to the design and development of reliable product to prevent failure, based on the knowledge of root cause failure mechanisms. The Physics of Failure (PoF) concept is based on the understanding of the relationships between requirements and the physical characteristics of the product and their variation in the manufacturing processes ...
Characterization of transport properties requires fabricating a device and measuring its current-voltage characteristics. Devices for transport studies are typically fabricated by thin film deposition or break junctions. The dominant transport mechanism in a measured device can be determined by differential conductance analysis.
From the resistance point of view, stochastic (not oriented) movement of electrons is useless even if they carry the same energy – they move thermally. If the electrons undergo inelastic interactions too, they lose energy and the result is a second mechanism of resistance. Electrons which undergo inelastic interaction are then similar to non ...
L. M. Kachanov [5] and Y. N. Rabotnov [6] suggested the following evolution equations for the creep strain ε and a lumped damage state variable ω: ˙ = ˙ ˙ = ˙ where ˙ is the creep strain rate, ˙ is the creep-rate multiplier, is the applied stress, is the creep stress exponent of the material of interest, ˙ is the rate of damage accumulation, ˙ is the damage-rate multiplier, and is ...