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IBA (Ion Beam Applications SA) is a medical technology company based in Louvain-la-Neuve. The company was founded in 1986 by Yves Jongen within the Cyclotron Research Center of the University of Louvain (UCLouvain) and became a university spin-off. It employs about 1500 people in 40 locations. [1]
A second accelerator, called CYCLONE30, was designed and built by the Cyclotron Research Centre team between 1984 and 1987: mainly designed for industrial and medical applications, it is mainly used for isotope production. [15] [16] Further models of CYCLONE30 were built by Ion Beam Applications. [17]
A small ion beam rocket being tested by NASA. An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely ...
The basic layout of an ion beam apparatus is an accelerator which produces an ion beam that is feed through an evacuated beam-transport tube to a beam handling device. This device isolates the ion species and charge of interest which then are transported through an evacuated beam-transport tube into the target chamber.
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As the input parameters, it needs the ion type and energy (in the range 10 eV – 2 GeV) and the material of one or several target layers. As the output, it lists or plots the three-dimensional distribution of the ions in the solid and its parameters, such as penetration depth, its spread along the ion beam (called straggle) and perpendicular to it, all target atom cascades in the target are ...
Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. [1] Ion beam deposition setup with mass separator. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. [2] In the ion source ...
Ion-beam lithography offers higher resolution patterning than UV, X-ray, or electron beam lithography because these heavier particles have more momentum. This gives the ion beam a smaller wavelength than even an e-beam and therefore almost no diffraction. The momentum also reduces scattering in the target and in any residual gas.