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  2. List of free electronics circuit simulators - Wikipedia

    en.wikipedia.org/wiki/List_of_free_electronics...

    List of free analog and digital electronic circuit simulators, available for Windows, macOS, Linux, and comparing against UC Berkeley SPICE. The following table is split into two groups based on whether it has a graphical visual interface or not.

  3. Depletion and enhancement modes - Wikipedia

    en.wikipedia.org/wiki/Depletion_and_enhancement...

    In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...

  4. Quite Universal Circuit Simulator - Wikipedia

    en.wikipedia.org/wiki/Quite_Universal_Circuit...

    It offers the ability to set up a circuit with a graphical user interface and simulate the large-signal, small-signal and noise behaviour of the circuit. Originally, Qucs was composed of a circuit simulator "qucs-core", now Qucsator, and a GUI for schematic entry and plotting. The usage patterns, as well as the emphasis on RF design, were ...

  5. Overdrive voltage - Wikipedia

    en.wikipedia.org/wiki/Overdrive_voltage

    Overdrive voltage, usually abbreviated as V OV, is typically referred to in the context of MOSFET transistors.The overdrive voltage is defined as the voltage between transistor gate and source (V GS) in excess of the threshold voltage (V TH) where V TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity).

  6. Current mirror - Wikipedia

    en.wikipedia.org/wiki/Current_mirror

    The small-signal analysis of the MOSFET circuit of Figure 4 is obtained from the bipolar analysis by setting β = g m r π in the formula for R out and then letting r π → ∞. The result is The result is

  7. Semiconductor device modeling - Wikipedia

    en.wikipedia.org/wiki/Semiconductor_device_modeling

    Gate bias is varied in a nanowire MOSFET at drain bias Vd=0.6V. Notice the confined energy levels as they move with gate bias. Physics driven device modeling is intended to be accurate, but it is not fast enough for higher level tools, including circuit simulators such as SPICE. Therefore, circuit simulators normally use more empirical models ...

  8. 2N7000 - Wikipedia

    en.wikipedia.org/wiki/2N7000

    MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit; The main disadvantages of these FETs over bipolar transistors in switching are the following:

  9. MOS-controlled thyristor - Wikipedia

    en.wikipedia.org/wiki/MOS-controlled_thyristor

    A thyristor with only one MOSFET in its equivalent circuit, which can only be turned on (like normal SCRs), is called an MOS-gated thyristor. Schematic of a MOSFET-controlled thyristor Positive voltage on the gate terminal with respect to the cathode turns the thyristor to the on state.