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The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
Depending on the material and the degree of detail desired, a variety of energy levels will be plotted against position: E F or μ: Although it is not a band quantity, the Fermi level (total chemical potential of electrons) is a crucial level in the band diagram. The Fermi level is set by the device's electrodes.
Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).
The circuit is treated as a completely linear network of ideal diodes. Every time a diode switches from on to off or vice versa, the configuration of the linear network changes. Adding more detail to the approximation of equations increases the accuracy of the simulation, but also increases its running time.
Various semiconductor diodes. Left: A four-diode bridge rectifier.Next to it is a 1N4148 signal diode.On the far right is a Zener diode.In most diodes, a white or black painted band identifies the cathode into which electrons will flow when the diode is conducting.
The characteristic curve (curved line), representing the current I through the diode for any given voltage across the diode V D, is an exponential curve. The load line (diagonal line) , representing the relationship between current and voltage due to Kirchhoff's voltage law applied to the resistor and voltage source, is
Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes).This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...
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