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The static qualifier differentiates SRAM from dynamic random-access memory (DRAM): SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
VCM inserts an SRAM cache of 16 "channel" buffers, each 1/4 row "segment" in size, between DRAM banks' sense amplifier rows and the data I/O pins. "Prefetch" and "restore" commands, unique to VCSDRAM, copy data between the DRAM's sense amplifier row and the channel buffers, while the equivalent of SDRAM's read and write commands specify a ...
It is a set of small DRAM banks with an SRAM cache in front to make it behave much like a true SRAM. It is used in Nintendo GameCube and Wii video game consoles. Cypress Semiconductor 's HyperRAM [ 66 ] is a type of PSRAM supporting a JEDEC -compliant 8-pin HyperBus [ 67 ] or Octal xSPI interface.
An SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM; therefore, SRAM circuits require more area on a chip. As a result, data density is much lower in SRAM chips than in DRAM, and gives SRAM a higher price per bit.
SRAM consists of a series of transistors arranged in a flip-flop, which will hold one of two states as long as power is applied. Since the transistors have a very low power requirement, their switching time is very low. However, since an SRAM cell consists of several transistors, typically four or six, its density is much lower than DRAM.
[a] DRAM dominates for desktop system memory. SRAM is used for CPU cache. SRAM is also found in small embedded systems requiring little memory. SRAM retains its contents as long as the power is connected and may use a simpler interface, but commonly uses six transistors per bit. Dynamic RAM is more complicated for interfacing and control ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
This led to his development of a single-transistor DRAM memory cell. [18] In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology. [23] The first commercial DRAM IC chip was the Intel 1103, which was manufactured on an 8 μm MOS process with a capacity of 1 kbit, and was released in 1970. [10 ...
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