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The first practical form of random-access memory was the Williams tube. It stored data as electrically charged spots on the face of a cathode-ray tube. Since the electron beam of the CRT could read and write the spots on the tube in any order, memory was random access.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM (ovonic unified memory) and C-RAM or CRAM (chalcogenide RAM)) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass .
The memory is divided into several equally sized but independent sections called banks, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an interleaved fashion. This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could.
Dual-ported RAM (DPRAM), also called dual-port RAM, is a type of random-access memory (RAM) that can be accessed via two different buses.. A simple dual-port RAM may allow only read access through one of the ports and write access through the other, in which case the same memory location cannot be accessed simultaneously through the ports since a write operation modifies the data and therefore ...
Graphics DDR SDRAM (GDDR SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) specifically designed for applications requiring high bandwidth, [1] e.g. graphics processing units (GPUs).
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. [2]